STS Reactive Ion Etch

Stacks Image 332
This is a plasma etching tool which is configured to Reactive Ion Etch a wide range of materials.
• Samples are manually loaded into the process chamber and the etching process is computer controlled.
• The 13.56 MHz system uses tetrafluoromethane and oxygen to etch materials such as silicon dioxide and silicon nitride.
• Typically used to selectively etch silicon dioxide from a silicon wafer using photoresist as a mask.