Professor Ian Mitchell 's research is focused on ion beam methods. One laboratory is equipped with a 2.5 MV Van de Graaff positive ion accelerator delivering light ion beams to several general purpose target chambers and two state-of-the-art ultra high vacuum chambers, fully equipped for surface characterization. These will permit in situ ion scattering, ion channeling, nuclear reaction, and Auger and X-ray analysis. The second laboratory houses a 1.7 MV high current Tandem accelerator equipped for light and heavy ion beam delivery. Facilities include a variable temperature implantation chamber, a general purpose analysis chamber with goniometer, and an ultra high vacuum chamber equipped with a toroidal electrostatic analyzer for studying lattice structures. Currently this method is used to examine the anomalous movement and activation of boron, technologically the most important of the dopant species used for altering the conductivity type for silicon devices. In an analogous set of studies fast particle irradiation is being used to modify the compositional profiles across the boundaries between well and barrier components of extremely narrow (e.g. 10 nm and less) structures - so-called quantum well structures - with a view to both understanding and capitalizing on the associated changes in the wavelengths of optical emission. If such engineering of the quantum wells can be controlled, there is a direct route to integrated optoelectronic circuitry. A large and very successful collaborative research program with scientists at the Institute for Microstructural Sciences at NRCC, Ottawa is now entering its fifth year.

Professor Peter Norton 's group specializes in research on the properties of interfaces and surfaces of materials that, in general have important applications in industry. Materials include metals and alloys, semiconductors (Group IV and III-V) and polymers. Major areas of interest include research related to corrosion with fundamental studies of the migration of species such as H and O in metals and alloys and the interaction of water with metal surfaces. Many of these studies are relevant to nuclear materials. Understanding the microscopic mechanisms of thin film growth on metals, semiconductors and polymers is another major focus. In studies of magnetic materials, the development of magnetic properties in ultra-thin ferromagnetic films (few atomic layers) are correlated with microscopic chemistry and structure with a view to controlling the magnetic behaviour (relevant to magnetic data storage). Collaborative projects have recently been developed with Materials Engineering in which the fundamentals of friction, lubrication and wear (tribology) are being uncovered. A unique capability is the interfacial force microscope (IFM) with which quantitative nanometer scale mechanical properties can be determined at resolutions approaching the imaging capabilities of the AFM. This is being used to study antiwear films, polymer surfaces, composites, adhesion phenomena and phase segregated surfaces relevant to modern materials.

Professor Peter Simpson 's Positron Beam Laboratory uses beams of positrons (the anti-particle of the electron) as a probe to study the structure of solids, especially electronic materials. Point defects (vacancies, i.e. atoms missing from the crystal structure, and impurities) play a key role in determining the electronic properties of materials used for integrated circuits. To develop new materials and processes, an understanding of defect structures and behaviour is vital, and will become more so in the future as devices are made smaller and faster. Positron annihilation is a technique that can provide unique information on the microstructure of materials. The UWO Positron Beam Laboratory is engaged in the state-of-the-art development of positron techniques, and their application to the materials of high technology.

Professor Martin Zinke-Allmang 's research group focuses on dynamic processes during thin film growth, investigated with an emphasis on semiconductor heterosystems. In particular he is currently studying morphologies formed by metal deposits such as Ga, In and Sn on GaAs and InP surfaces and silicon. These studies are complemented by applications of these concepts in technologically relevant systems, currently focusing on silicide formation on silicon and silicon- germanium alloy surfaces. Fundamental topics are surface diffusion, clustering and nucleation and self-etching.