There are two Time Resolved Reflectivity (TRR) systems.

Ion Implantation Chamber

• This system allows in situ monitoring of ion implantation experiments.
• Two laser beams of wavelength 633 nm and 1152 or 1523 nm are reflected from the sample during implantation or annealing to monitor changes in the optical properties of the near surface of the sample.
• Modification of the material structure by ion implantation results in changes in the complex refractive index. Under annealing, the reverse process can also be observed.
• Experiments involving damage accumulation, amorphization and crystallization can be performed in this system with dramatically improved efficiency as compared to conventional ex-situ analysis.

Tube Furnace

• A single laser wavelength (633 nm) TRR system is fitted to a conventional Lindberg tube furnace.
• Temperatures of up to 1200C are possible.
• Dry or (isotopically labeled) Wet gas ambients are available.
• The difference in refractive index between crystal and amorphous phases provides a changing reflectivity during the crystallization of thin films.
• This system is used primarily for studying crystallization rates in ceramics and semiconductors as a function of temperature and gas ambient.