III-V MBE Growth System

• connected to Medium Energy Ion Scattering Chamber (MEIS)
• Room for 8 Knudsen cells, three are used now and presently charged with Ge, Sn, and Ga.
• rotatable sample heating stage up to about 1100 C
• wobble stick attachment presently used for partial masking of substrates during deposition
• ports available for RHEED (reflected high energy electron diffraction)
• designed for 1 cm square sample size, but upgrade-able to 2" wafers.
• system used mainly for studying metal clusters on semiconductor substrates, decomposition of III-V semiconductors

Group IV MBE Growth System

• has growth chamber and analysis chamber
• analysis chamber has manipulator with 5 axis movement (x,y,z and 2 rotations). Stage has electron beam heating and liquid N2 cooling with temperature range of -150 to 1100 C.
• connected to accelerator , providing insitu implantation and RBS capabilities

  growth chamber

• 3 electron beam evaporation sources charged with Si, Ge and Co for silicide and Si/Ge studies. Each source has its own deposition rate monitor.
• sample stage designed for 1 cm square sample size. x,y,z and 2 rotations. electron beam heating to 1100 C.
• potential add-ons : 3 Knudsen cell ports, RHEED, sputtering.