Ion Implantation

A high vacuum chamber houses the UWO ion implantation facility.
Ion beams of virtually any element are provide by a 1.7 MV tandem accelerator.
The capability currently exists to implant samples with up to a 2 inch diameter at substrate temperatures in the range -195 to 600 C. Wafers of 3 and 4 inch diameter can currently be implanted at room temperature only. Dose uniformity is on the order of 3%.
Substrates are mounted on a nickel block which can be heated or cooled to temperatures in the range -195 to 600 C. The temperature is monitored by 3 thermocouple imbedded in the nickel block.
This system is fitted with an optical probe for in situ studies of implant damage and recovery.